TheMRF1K50H is housed in a standard air cavity ceramic package, and is impedancecompatible with existing high-power transistors on the market today: it cansimply be dropped into existing systems, without the need to redesign the printed-circuitboard (PCB), requiring only light retuning. This level of ruggedness increases reliability, which makes thetransistor an excellent alternative to vacuum tubes. Like allrugged LDMOS transistors, the MRF1K50H is expected to survive a VSWR of 65:1but can absorb 50 percent more energy than its predecessor, the 1.25-kWMRFE6VP61K25H.
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The MRF1K50H operates upto 500 MHz for a broad range of applications from laser and plasma sources toparticle accelerators, industrial welding machines, radio and VHF TV broadcasttransmitters, and amateur radio linear amplifiers. Designed to deliver 1.50 kW CW at 50V,the MRF1K50H can reduce the number of transistors in high-power RF amplifiers,which decreases amplifier size and bill of materials. NXPSemiconductors today introduced the most powerful RF transistor in anytechnology operating at any frequency. “As an extension of our flagship product, it encompasses all the benefits of GaN technology and our approach to GaN power transistors – ease of use, high power density, and high efficiency – enabling power systems that are smaller in size and lower cost with unprecedented power levels.”įor more information, please contact GaN Systems Sales or come see GaN Systems at Booth #1041 at APEC.Combines industry's highestRF output power with superior ruggedness and thermal performance “This is the most pivotal GaN product on the market to be optimized for modules and is compatible with both embedded and traditional module technology,” stated Jim Witham, CEO of GaN Systems.
Customers will use this die product in half-bridge, full-bridge, and six pack module topologies to create enhanced, high-power designs. Modules are an important form factor in high power electronics constituting up to 40 percent of the market based on form factor. The product (GS-065-120-1-D), sold as a die to customers building modules, is the lowest R DS(on), highest current 650 V GaN HEMT in the power semiconductor industry. This transistor, with twice the current capability of GaN Systems’ highest rated current part, allows customers to effectively double the power processing for the same volume. Gan Systems’ 120 A, 650 V GaN E-HEMT increases the power density of 20 to 500 kW power conversion systems, including automotive traction inverters, very high power on-board chargers (OBC), large-scale energy storage systems, and industrial motor drives. This pioneering product will be showcased at the upcoming Applied Power Electronics Conference & Exposition ( APEC) in San Antonio, Texas on March 4-8, 2018 in Booth #1041. The numerous advantages of GaN can be applied to much higher power levels today in the automotive, industrial, and renewable energy industries. Power levels continue to rise creating the need for higher operating current. OTTAWA, Ontario, Canada, Febru– GaN Systems, the global leader in GaN power semiconductors, today made public the 120 A, 650 V GaN E-HEMT, extending its leadership with the industry’s most powerful line of high performance GaN transistors.
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